ZVNL120ASTZ【PDF 1/3 页】MOSFET N-CHAN 200V TO92-3

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Sheet目录539

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N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 – MARCH 94

FEATURES

* 200 Volt V DS

* R DS(on) =10 ?

* Low threshold

ZVNL120A

APPLICATIONS

* Telephone handsets

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at T amb =25°C

Pulsed Drain Current

Gate Source Voltage

Power Dissipation at T amb =25°C

Operating and Storage Temperature Range

SYMBOL

V DS

I D

I DM

V GS

P tot

T j :T stg

VALUE

200

180

± 20

700

-55 to +150

UNIT

°C

ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source Breakdown

BV DSS

200

I D =1mA, V GS =0V

Voltage

Gate-Source Threshold

V GS(th)

0.5

1.5

ID=1mA, V DS = V GS

Voltage

Gate-Body Leakage

Zero Gate Voltage Drain

Current

On-State Drain Current(1)

Static Drain-Source On-State

Resistance (1)

Forward Transconductance

I GSS

I DSS

I D(on)

R DS(on)

g fs

500

200

100

μ A

V GS = ± 20V, V DS =0V

V DS =200 V, V GS =0

V DS =160 V, V GS =0V, T=125°C (2)

V DS =25 V, V GS =5V

V GS =5V,I D =250mA

V GS =3V, I D =125mA

V DS =25V,I D =250mA

(1)(2)

Input Capacitance (2)

C iss

Common Source Output

C oss

V DS =25 V, V GS =0V, f=1MHz

Capacitance (2)

Reverse Transfer Capacitance

C rss

(2)

Turn-On Delay Time (2)(3)

t d(on)

Rise Time (2)(3)

Turn-Off Delay Time (2)(3)

Fall Time (2)(3)

t r

t d(off)

t f

V DD ≈ 25V, I D =250mA

(1) Measured under pulsed conditions. Width=300 μ s. Duty cycle ≤ 2% (2) Sample test.

(3) Switching times measured with 50 ? source impedance and <5ns rise time on a pulse generator

3-401

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